GaN growth on Si„111... substrate using oxidized AlAs as an intermediate layer
نویسندگان
چکیده
We have demonstrated that GaN can be grown epitaxially by atmospheric pressure metalorganic chemical vapor deposition on an aluminum oxide compound layer utilized as an intermediate layer between GaN and a Si~111!. X-ray diffraction measurement indicates that single-crystal hexagonal GaN with its basal plane parallel to the Si~111! plane is grown. Using a scanning electron microscope, the macroscopic evolution of GaN grown on the AlOx /Si~111! substrate is found to be similar to that of GaN grown on a sapphire~0001! substrate. Cathodoluminescence ~CL! spectrum shows a unique emission that consists of several peaks with the intensity comparable to that of the near-band-edge emission. Unique characteristics in CL spectrum are discussed in terms of a possible oxygen contamination of GaN grown on the AlOx /Si~111! substrate. © 1997 American Institute of Physics. @S0003-6951~97!03048-9#
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Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer
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